PART |
Description |
Maker |
M57959 M57959L |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V From old datasheet system HYBRID IC FOR DRIVING IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor] ETC Mitsubishi Electric Corporation
|
MID400-12E4T |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID75-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID50-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE 100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE 150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation POWEREX [Powerex Power Semiconductors] POWEREX[Powerex Power Semiconductors]
|
SEMIX202GB128DS08 |
SPT IGBT Modules 190 A, 1200 V, N-CHANNEL IGBT
|
Semikron International http://
|
SEMIX252GB126HDS |
Trench IGBT Modules 270 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX303GB12E4S |
Trench IGBT Modules 466 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|